论携号转网行为的私法规制

以电信用户入网协议为切入点,电信用户的携号转网行为应受到《合同法》《消费者权益保护法》等私法规范的保护与限制。该行为引起的格式条款解释、合同终止、违约责任、损失赔偿等问题,不能仅靠《电信条例》等公法规范来调整。应当积极引导广大消费者用户以私法领域相关规定为依据,转变争议解决思维,拓宽纠纷处理途径,合理选择维权手段,以保护自身合法民事权益,与行业监管部门共同推动电信行业有序发展。     

克拉苏构造带盐下超深层储层的构造改造作用与油气勘探新发现

塔里木盆地克拉苏构造带油气群下白垩统巴什基奇克组埋深超过6 000 m,储层基质渗透率低,裂缝普遍发育,构造对储层的改造作用明显,但博孜9井的勘探突破反映出不同区带间构造改造作用差异较大、非均质性极强,重新认识构造对储层的改造作用对于预测超深层储层、指导油气勘探生产具有重要的意义。为此,基于钻井取心、构造平衡恢复、裂缝充填物同位素测年、区块应力数值模拟等资料,结合流体包裹体、声发射古应力、铸体薄片等实验分析方法,从定性分析到定量计算、研究了克拉苏构造带油气群超深层储层的构造改造作用及其差异性。研究结果表明:①北部天山造山带及南部古隆起控制了该构造带储层的沉积格局及差异构造变形,形成巴什基奇克组储层"西薄东厚"的分布特征;②博孜区段古应力最小,构造变形主要为正向挤压、逆冲传播,局部井区为斜向压扭;③大北区段主要为斜向压扭,古应力较小,构造变形为逆冲叠置;克深区段古应力最大,构造变形主要为正向挤压、后缘逆冲抬升、前缘滑脱收缩;④差异构造变形使同一构造带不同构造变形样式的构造减孔量呈现出较大的差别,且控制了不同区段造缝期与成岩胶结的叠加影响、中晚期裂缝网络与油气成藏期的配置关系,加剧了储层的非均质性,是区段间产能差异的基础改造因素;⑤现今构造应力的大小及方向影响裂缝有效性,南部为强挤压应力区,背斜相对高部位裂缝走向与现今应力交角较小,裂缝有效性最好;⑥构造成岩环境决定了构造裂缝充填物的类型,北部区块以淡水—半碱水介质成岩环境为主,裂缝充填物类型为方解石,有利于对储层进行酸化压裂改造。     

两级伸缩式液压缸与四柱两级滑轨的故障分析与排除

本文通过对两级伸缩式液压缸与四柱滑轨结合使用中所出现问题及处理过程的阐述,提出了在液压系统设计与制造中,准确的原理仅仅是基础,其上还有许许多多的细枝末节需要仔细修剪,比如污染、噪声、温度、泄漏以及与机械的协调等等。     

Enhanced thermal stability of Bi2Te3-based alloys via interface engineering with atomic layer deposition

The ease of Te sublimation from Bi₂Te₃-based alloys significantly deteriorates thermoelectric and mechanical properties via the formation of voids. We propose a novel strategy based on atomic layer deposition (ALD) to improve the thermal stability of Bi₂Te₃-based alloys via the encapsulation of grains with a ZnO layer. Only a few cycles of ZnO ALD over the Bi₂Te_2.7Se_0.3 powders resulted in significant suppression of the generation of pores in Bi₂Te_2.7Se_0.3 extrudates and increased the density even after post-annealing at 500 °C. This is attributed to the suppression of Te sublimation from the extrudates. The ALD coating also enhanced grain refinement in Bi₂Te_2.7Se_0.3 extrudates. Consequently, their mechanical properties were significantly improved by the encapsulation approach. Furthermore, the ALD approach yields a substantial improvement in the figure-of-merit after the post-annealing. Therefore, we believe the proposed approach using ALD will be useful for enhancing the mechanical properties of Bi₂Te₃-based alloys without sacrificing thermoelectric performance.     

Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer

In this study, a trapezoidal-shaped electron blocking layer is proposed to improve efficiency droop of InGaN/GaN multiple quantum well light-emitting diodes. The energy band diagram, carrier distribution profile, electrostatic field, and electron current leakage are systematically investigated between two light-emitting diodes with different electron blocking layer structures. The simulation results show that, when traditional AlGaN electron blocking layer is replaced by trapezoidal-shaped electron blocking layer, the electron current leakage is dramatically reduced and the hole injection efficiency in markedly enhanced due to the better polarization match, the quantum-confined Stark effect is mitigated and the radiative recombination rate is increased in the active region subsequently, which are responsible for the alleviation of efficiency droop. The optical performance of light-emitting diodes with trapezoidal-shaped electron blocking layer is significantly improved when compared with its counterpart with traditional AlGaN electron blocking layer.     

Optimal PMU placement considering topology constraints

A new optimization algorithm for optimal PMU configuration based on combination of graph theory and genetic algorithm is proposed. According to four topology reconstruction rules and three PMU configuration rules based on the graphic relationships between PMUs, constraints of PMU placement are put forward through topology constraint analysis, which dramatically limits the feasible solution space, thereby enhancing the algorithm speed. Meanwhile, an improved genetic algorithm based on serial number coding is presented to avoid infeasible solutions and improve the overall optimization performance. New corresponding crossover and mutation operator is also created. Examples show that the proposed algorithm performs very well and is highly valuable to large-scale networks.     

Unreliable numbers: error and harm induced by bad design can be reduced by better design

Number entry is a ubiquitous activity and is often performed in safety- and mission-critical procedures, such as healthcare, science, finance, aviation and in many other areas. We show that Monte Carlo methods can quickly and easily compare the reliability of different number entry systems. A surprising finding is that many common, widely used systems are defective, and induce unnecessary human error. We show that Monte Carlo methods enable designers to explore the implications of normal and unexpected operator behaviour, and to design systems to be more resilient to use error. We demonstrate novel designs with improved resilience, implying that the common problems identified and the errors they induce are avoidable.     

基于BP算法的无人机物理层网络编码研究

建立了基于置信传播(BP)算法的双向中继系统传输模型,理论推导了中继节点处物理层网络编码的映射关系,研究了不同调制方式下各种异步因素对通信系统误码率的影响规律,为无人机在实战中更广泛地应用提供理论基础.     

An efficient polymer solar cell using graphene oxide interface assembled via layer-by-layer deposition

Graphene oxide (GO) is widely used as an interfacial material in applications such as organic light emitting diodes and photovoltaic devices. Herein we report a layer-by-layer (LbL) assembled GO thin film as an anode interfacial layer (AIL) for efficient polymer solar cells (PSCs). The GO thin film is fabricated by alternately depositing cationic polyelectrolyte poly(diallyldimethylammonium chloride) (PDDA) and GO on ITO/glass substrate, which possesses controllable thickness by adjusting LbL deposition frequency. The presence of ultrathin GO films improves the work function of ITO, leading to a better contact between the active layer and ITO anode. With the optimized number of deposition times, the efficiency of 6.04% for the PSC with PDDA-GO bilayer (GO-2) as the AIL was achieved.     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.